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硒化物晶体

  • 二硒化钒晶体(99.995%) VSe2 (Vanadium Diselenide)
  • 二硒化钒晶体(99.995%) VSe2 (Vanadium Diselenide)
  • 二硒化钒晶体(99.995%) VSe2 (Vanadium Diselenide)
  • 二硒化钒晶体(99.995%) VSe2 (Vanadium Diselenide)
二硒化钒晶体(99.995%) VSe2 (Vanadium Diselenide)二硒化钒晶体(99.995%) VSe2 (Vanadium Diselenide)二硒化钒晶体(99.995%) VSe2 (Vanadium Diselenide)二硒化钒晶体(99.995%) VSe2 (Vanadium Diselenide)

二硒化钒晶体(99.995%) VSe2 (Vanadium Diselenide)

二硒化钒晶体 VSe2 (Vanadium Diselenide)
晶体尺寸:~8毫米
电学性能:金属,电荷密度波(CDW)
晶体结构:六边形
晶胞参数:a = b = 0.336 nm, c = 0.609 nm, α = β = 90°, γ =120°
晶体类型:合成
晶体纯度:>99.995%

X-ray diffraction on a Vanadium Diselenide single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (00l) with l = 1, 2, 3, 4


Powder X-ray diffraction (XRD) of a single crystal VSe2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.


Stoichiometric analysis of a single crystal VSe2 by Energy-dispersive X-ray spectroscopy (EDX).


Raman spectrum of a single crystal VSe2. Measurement was performed with a 785 nm Raman system at room temperature.

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